NVTS NAVITAS SEMICONDUCTOR CORP

Navitas and Plexim Accelerate Time-to-Market with PLECS Models for Next-generation GeneSiC™ Power Semiconductors

Navitas and Plexim Accelerate Time-to-Market with PLECS Models for Next-generation GeneSiC™ Power Semiconductors

Detailed simulation of next-gen GeneSiC silicon carbide (SiC) MOSFETs and MPS™ diodes delivers virtual prototyping for accurate system-level designs



TORRANCE, Calif. and ZURICH, Switzerland, June 29, 2023 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), and Plexim GmbH announce a partnership to release GeneSiC G3™ SiC MOSFET and Gen 5 MPS diode PLECS thermal loss models for highly-accurate simulations of complete power electronics systems.

Power designers can simulate power and thermal losses in various soft- and hard-switching applications. Proprietary GeneSiC trench-assisted planar-gate MOSFET technology delivers the lowest RDS(ON) at high temperature and the highest efficiency at high speeds, and new MPS diodes with ‘low-knee’ characteristics drive unprecedented, industry-leading levels of performance, robustness and quality.

“Accurate, empirically-based simulation models maximize the chance of first-time-accurate designs, accelerating time-to-market and time-to-revenue,” noted Dr. Ranbir Singh, Navitas EVP for the GeneSiC business line. “For the power designer, understanding the leading-edge performance of GeneSiC MOSFETs and MPS diodes with detailed device characteristics, plus power, efficiency and thermal analysis is a critical competitive advantage.”

“The intuitive and highly-efficient PLECS lookup-table based approach to simulating thermal semiconductor losses in complex power electronic circuits is key,” said Kristofer Eberle, Plexim, North America. “Unlike legacy modeling approaches that are not well-suited to new wide bandgap materials, PLECS uses a simplified, but accurate behavioral description to highlight the superior performance of the GeneSiC MOSFETs.”

PLECS models for GeneSiC MOSFETs and MPS diodes are available today via .

About Plexim

Plexim provides design and testing tools for the power conversion industry. Its flagship product PLECS is the leading simulation software for power electronic systems and electrical drives used in applications including renewable energy, automotive, aerospace, industrial and traction drives, and power supplies. Plexim is located in Zurich and Cambridge, MA and has local distributors in Asian countries.

For more information, please visit

About Navitas

 (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar / energy storage, home appliance / industrial, data center, mobile and consumer. Over 185 Navitas patents are issued or pending. Over 75 million GaN and 10 million SiC units have been shipped, now with the industry’s first and only GaN . Navitas was the world’s first semiconductor company to be -certified.

Navitas, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor and subsidiaries. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information:

Kristofer Eberle, Director of Business Development:

Stephen Oliver, VP Corporate Marketing & Investor Relations,

A photo accompanying this announcement is available at



EN
29/06/2023

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution fo...

Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers. TORRANCE, Calif. and LAUSANNE, Switzerland, March 04, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most...

 PRESS RELEASE

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and...

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026 Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs. TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- (Na...

 PRESS RELEASE

Navitas to Present at the Morgan Stanley Technology, Media & Telecom C...

Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 TORRANCE, Calif., Feb. 25, 2026 (GLOBE NEWSWIRE) -- , (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley Technology, Media and Telecom Conference to be held at the Palace Hotel in San Francisco, CA. Navitas’ President and CEO, Chris Allexandre, is scheduled to host a fireside chat at 12:20 p.m. Pacific Time on Tuesday, March 3, 2026, an...

 PRESS RELEASE

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Fina...

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion serviceable available market (SAM) in 2030High-power markets represented majority of quarterly revenue for the first time in the Company’s history with mobile declining to less than 25%Anticipates a return to top-line sequential growth beginning in t...

 PRESS RELEASE

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Techno...

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its 5th-generation GeneSiC technology platform. The High Volt...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch