NVTS NAVITAS SEMICONDUCTOR CORP

Navitas Exceeds New 80 PLUS ‘Ruby’ Certification for Highest Level of Efficiency in AI Data Center Power Supplies

Navitas Exceeds New 80 PLUS ‘Ruby’ Certification for Highest Level of Efficiency in AI Data Center Power Supplies

AI Power Roadmap of 3.2 kW, 4.5 kW, and 8.5 kW PSUs enable new levels of energy efficiency, reduced electricity costs, and extended lifetime.

TORRANCE, Calif., March 17, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its portfolio of 3.2kW, 4.5kW, and 8.5 kW AI data center power supply unit (PSU) designs exceed the new , focused on the highest level of efficiency for redundant server data center PSUs.

The 80 PLUS certification program assesses and certifies the energy efficiency of internal PSUs in computers and servers. The ‘Ruby’ certification was announced in January 2025 by 80 PLUS's administrating body, , following its by the Green Grid consortium.

‘Ruby’ is the most rigorous PSU efficiency standard since the ‘Titanium’ certification was released 14 years ago. In comparison, Ruby sets an additional 1% system efficiency across all load conditions, except at 50% load (which requires a 0.5% increase), to achieve a new benchmark of 96.5% efficiency.

This new standard offers the industry a clear path to enhanced energy efficiency, helping data centers address the evolving needs of cloud storage, commercial sectors, and the increasing pressure on the grid from AI computing. For example, every Ruby-certified 3.2 kW CRPS185 PSU can save up to 420 kilowatt-hours during a 3-year lifetime. That is the equivalent of over 400 kg of CO2 emissions.

Navitas exceeds both Ruby and Titanium certifications on their portfolio of AI data center PSU reference designs, ranging from 3.2 kW to 8.5 kW, and are powered by high-power ™ ICs and GeneSiC™ .

Navitas is the established leader in AI data center solutions enabled by GaN and SiC technology. In August 2023, they introduced a high-speed, high-efficiency than best-in-class, legacy silicon solutions for power-hungry AI and Edge computing. This was followed by the CRPS, achieving a ground-breaking 137 W/in3, and efficiency of over 97%. In November 2024, Navitas released the AI data center power supply powered by GaN and SiC that could meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Additionally, Navitas created technique, that when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies to 99.3% and reduces power losses by 30% reduction compared to existing solutions.

“Compared with Titanium, Ruby cuts the allowable PSU losses significantly and will be critical in enabling the data center industry to reduce its carbon footprint and cut operational costs,” said Gene Sheridan, CEO and co-founder of Navitas. “With the industry set to consume 1,000 TWh annually by next year, every percentage point improvement in efficiency represents a reduction of 10 TWh, or approximately 3.5 million tons of CO2. Advances in our GaNFast and GeneSiC products enable these targets to be met and significantly exceeded.”

Navitas’ AI Power Roadmap and 80 PLUS Ruby-compliant demos can be viewed at the ‘Planet Navitas’ booth #1107 during the conference, which takes place at Atlanta's Georgia World Congress Center from March 16 to 20. For more information, please contact or visit .

About Navitas

 (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating  of power innovation founded in 2014.  integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary  devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only . Navitas was the world’s first semiconductor company to be .

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information

Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing



A photo accompanying this announcement is available at



EN
17/03/2025

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and...

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026 Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs. TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- (Na...

 PRESS RELEASE

Navitas to Present at the Morgan Stanley Technology, Media & Telecom C...

Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 TORRANCE, Calif., Feb. 25, 2026 (GLOBE NEWSWIRE) -- , (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley Technology, Media and Telecom Conference to be held at the Palace Hotel in San Francisco, CA. Navitas’ President and CEO, Chris Allexandre, is scheduled to host a fireside chat at 12:20 p.m. Pacific Time on Tuesday, March 3, 2026, an...

 PRESS RELEASE

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Fina...

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion serviceable available market (SAM) in 2030High-power markets represented majority of quarterly revenue for the first time in the Company’s history with mobile declining to less than 25%Anticipates a return to top-line sequential growth beginning in t...

 PRESS RELEASE

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Techno...

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its 5th-generation GeneSiC technology platform. The High Volt...

 PRESS RELEASE

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Eff...

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, Calif., Feb. 09, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and ...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch