NVTS NAVITAS SEMICONDUCTOR CORP

Navitas Fast Charges Global Launch of The OnePlus 11 5G

Navitas Fast Charges Global Launch of The OnePlus 11 5G

Integrated GaNFast™ gallium nitride (GaN) technology enables ultra-fast charging speed, efficiency, and portability.

TORRANCE, Calif., Feb. 13, 2023 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has confirmed that its GaNFast technology fast-charges the newly-released OnePlus 11 5G flagship smartphone.

Powered by a Qualcomm Snapdragon 8 Gen 2 chipset, the flagship OnePlus 11 5G combines a modern, elegant design with effortless imaging supported by the 3rd Generation Hasselblad Camera for Mobile.

The 100 W SUPERVOOC charger shipped with the OnePlus 11 5G is built around an NV6134 GaNFast IC, with integrated GaN power and drive, plus control, protection and sensing in a high-frequency, quasi-resonant (HFQR) topology. This enables up to three-times faster charging, and up to 40% energy savings, in only half size and weight compared to legacy silicon solutions. As a result, the small 55 x 55 x 28 mm (85 cc) charger weighs only 112 g, and achieves 1.18 W/cc power density. Charging the phone’s 5,000 mAh battery from 1-50% takes only 10 minutes, and full 1-100% in around 25 minutes.

Navitas was featured as a key partner – alongside Google, Snapdragon, Hasselblad and Dolby - during the official OnePlus 11 5G launch event which took place in New Delhi on 7th February and livestreamed around the world. Navitas has worked closely with OnePlus, releasing a series of GaNFast chargers into mass production, and co-operating in live events such as the promotion of the OnePlus 10T and 10R models at Nasdaq and CES 2023.

“We continue to push the boundaries, to provide the ultimate fast charging experience to our users.” says Mr. Kinder Liu, OnePlus COO and Head of R&D. “Our strong collaboration with Navitas has allowed us to provide an advanced charger that not only delivers power quickly and efficiently to the high-capacity battery built into the OnePlus 11 5G, but also keeps charger size and weight to an absolute minimum.”

“The relationship with OnePlus continues to go from strength to strength, says Navitas founder and CEO, Gene Sheridan. “We are honored that our technology has once again been selected by OnePlus and excited to have been invited to play a part in the official launch of the OnePlus 11 5G.”

About OnePlus

OnePlus is a global mobile technology company challenging conventional concepts of technology. Created around the “Never Settle” mantra, OnePlus creates exquisitely designed devices with premium build quality and high-performance hardware. OnePlus thrives on cultivating strong bonds and growing together with its community of users and fans. For more information, please visit .

About Navitas

 (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 185 Navitas patents are issued or pending, and Navitas has earned over 20 technical and business . Over 70 million GaN units have been shipped with excellent quality performance, and the industry’s first and only 20-year warranty. Navitas was the world’s first semiconductor company to be -certified.

Navitas, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor and subsidiaries. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information:

Stephen Oliver, VP Corporate Marketing & Investor Relations,

A photo accompanying this announcement is available at



EN
13/02/2023

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas & BrightLoop Partners to Provide Next-Generation Hydrogen Fuel...

Navitas & BrightLoop Partners to Provide Next-Generation Hydrogen Fuel-Cell Charging GeneSiC™ MOSFET technology enables unmatched power density for high-voltage, high-power ‘multiverters’ in fuel-cell and heavy-duty transportation. TORRANCE, Calif., June 03, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced its partnership with supporting their latest series of hydrogen fuel-cell chargers with automotive qualified (G3F) MOSFETs for heavy-duty agricultu...

 PRESS RELEASE

Navitas Semiconductor to Participate in Upcoming Investor Events

Navitas Semiconductor to Participate in Upcoming Investor Events TORRANCE, Calif., May 30, 2025 (GLOBE NEWSWIRE) -- , the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced participation in the following upcoming investor events: Baird 2025 Global Consumer, Technology & Services ConferenceJune 3, 2025, Fireside Chat 8:30-9:00 ET; 1-on-1 meetings with Gene Sheridan, CEOLocation: InterContinental Barclay – New York, NY Rosenblatt 5th Annual Technology Summit: The Age of ...

 PRESS RELEASE

NVIDIA Selects Navitas to Collaborate on Next Generation 800 V HVDC Ar...

NVIDIA Selects Navitas to Collaborate on Next Generation 800 V HVDC Architecture Navitas’ GaN and SiC technologies have been selected to support Nvidia’s 800 V HVDC data center power infrastructure to support 1 MW IT racks and beyond TORRANCE, Calif., May 21, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced a collaboration with (Nasdaq: NVDA) on their next-generation 800 V HVDC architecture to support ‘Kyber’ rack-scale systems powering their GPUs, suc...

 PRESS RELEASE

Navitas Launches Industry-Leading 12kW GaN & SiC Platform, Achieving 9...

Navitas Launches Industry-Leading 12kW GaN & SiC Platform, Achieving 97.8% Efficiency for Hyperscale AI Data Centers Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs TORRANCE, Calif., May 21, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their latest 12 kW power supply unit (PSU) ‘designed for production’ re...

 PRESS RELEASE

Navitas Hosts “AI Tech Night” to Reveal Next Generation Platform for H...

Navitas Hosts “AI Tech Night” to Reveal Next Generation Platform for Hyperscale Data Centers Latest AI data center PSU platform enabled by GaNSafe™, GeneSiC™, and IntelliWeave™ will showcase industry-leading efficiency & power density for hyperscalers TORRANCE, Calif., May 15, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, will host an "AI Tech Night" event in Taipei, Taiwan, bringing together industry experts, supply chain partners, and...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch