NVTS NAVITAS SEMICONDUCTOR CORP

Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks

Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks

GaNFast™ and GeneSiC™ power technologies deliver portability, efficiency, and sustainability for Dell AI notebook computer adapters from 60 W to 360 W

TORRANCE, Calif., Feb. 05, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into Dell’s family of notebook adapters, from 60 W to 360 W.

Enabled by over 20 years of SiC technology leadership, GeneSiC leads on performance of SiC MOSFETs with patented and 5th-gen GeneSiC silicon carbide (SiC) diodes to deliver high-speed, high-efficiency performance with proprietary ’low-knee’ technology for cool operation.

Navitas’ enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices.

Navitas GaN & SiC technology together enables Dell to provide high-speed charging, with highest efficiency, coolest temperature, smallest size, and lowest material count. Dell’s latest line-up of includes Neural Processor Units (NPUs), which are dedicated AI engines, to manage sustained AI and AI offload. This builds on Dell’s portfolio as the broadest GaN adapter offering for notebooks in the industry.

The new adapters will also help Dell achieve its goals, with a focus on CO2 reduction and energy reduction. The adapter cases require up to 50% less plastic and are made with post-recycled materials, significantly reducing energy waste, and improving resource utilization. Navitas’ GaNFast and GeneSiC technologies increase the level of system integration and switching frequency, which reduces the number of components, as well as the size, resulting in a ‘dematerialization’ that lowers carbon footprint throughout the production, packaging, and logistics processes. Each GaNFast power IC shipped and every SiC MOSFET shipped vs. legacy silicon power chips.

“Since Dell’s first GaN adapter was enabled by Navitas back in 2020, we’ve worked closely with Dell engineering to further improve charging speed, efficiency, size, weight, and now environmental footprint,” said Gene Sheridan, CEO and co-founder of Navitas. “Dell’s new adapters are an optimal solution for speed, portability, and sustainability. Our clients achieve a win-win for both the market and environment by deploying Navitas GaNFast power ICs and GeneSiC power devices.”

For more information on our GaNFast portfolio and charging system solutions, please contact or visit .

About Navitas

 (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating  of power innovation founded in 2014.  integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary  devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only . Navitas was the world’s first semiconductor company to be .

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information:

Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing

Stephen Oliver, VP Investor Relations

A photo accompanying this announcement is available at



EN
05/02/2025

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