NVTS NAVITAS SEMICONDUCTOR CORP

Navitas GaN ICs Save First 100,000 Tons of CO2 Emissions

Navitas GaN ICs Save First 100,000 Tons of CO2 Emissions

Each next-Gen GaNFast™ power IC saves 4 kg CO2 vs legacy silicon chips, towards goal of saving 2.6 Gtons/yr by 2050

EL SEGUNDO, Calif., Aug. 04, 2022 (GLOBE NEWSWIRE) --  (Nasdaq: NVTS), the industry-leader in power integrated circuits (ICs), has announced the first saving of 100,000 tons of CO2 emissions as GaN replaces legacy silicon chips to “”.

GaN uses up to 10x-lower CO2 footprint to manufacture and ship compared to silicon, while reducing the end-application CO2 footprint up to 30%. Each GaN power IC shipped saves net 4 kg CO2 in comparison, and GaN offers the potential to address a reduction of 2.6 Gtons CO2/yr by 2050 – equivalent to the CO2 generated by over 650 coal-fired power stations, over six billion barrels of oil, over 560 million ICE passenger cars – or the annual electricity use of over 470 million homes.(1)

100,000 tons is a conservative estimate of cumulative customer savings in CO2 emissions, based on Navitas’ unit shipments, and third-party life-cycle assessment (LCA) of a 65W USB-C charger example. This also considers a six-month delay, accounting for shipping inventory and customer assembly. Navitas completed a comprehensive analysis working together with and completed an ISO14040/14044-compliant comparative LCA report quantifying the benefits of Si power semiconductor components vs GaN power ICs and USB-C chargers using GaN power IC products.

“The analysis shows that GaN power ICs provide a step-function improvement in environmental impacts over the incumbent Si solutions. As Navitas converts the world from Si to GaN over the next 5-10 years, the sustainability benefits will become significant in achieving global customer and nation net-zero goals", states Anthony Schiro, VP Quality and Sustainability at Navitas.

“A total life-cycle assessment, spanning 'cradle-to-(beyond-the)-grave' presents a holistic view, and it is critical to understand energy-usage and CO2 emissions from boule to device, and to ensure that we’re not shifting impacts to other areas of concern” commented Lise Laurin, CEO of EarthShift Global. “It’s critical that we apply a rigorous, data-driven approach to provide genuine insight into systems, products and processes, and broader perspectives are central to achieving greater sustainability.”

Navitas’ GaNFast power ICs integrate GaN power with drive, plus control, sensing and protection, allowing systems to consume less energy, minimize and reduce additional electronic components (e.g. magnetics, filters, capacitors), as well as mechanical components (e.g. PCB area, metal/plastic housing, aluminum heatsinks), which reduce oil/refinement demand, lowering shipping costs and CO2 footprint.

Navitas published the world’s first GaN sustainability report: “” to quantify the positive impact of GaN power semiconductors on climate change, based on global standards. Then in May 2021, Navitas became the world’s first semiconductor company to be .

About EarthShift Global (ESG)

helps top-level executives, front-line practitioners, academic researchers and policymakers worldwide achieve their objectives by providing software, consulting services, and training that de-mystify the path to sustainability. Our proven approach emphasizes engagement, adaptability and credible, measurable results, and the incorporation of performance-enhancing sustainable thinking into everyday business decisions.

About Navitas

(Nasdaq: NVTS) is the industry leader in GaN power ICs, founded in 2014. GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 165 Navitas patents are issued or pending, and over units have been shipped with zero reported GaN field-failures. Navitas  and started trading on Nasdaq on October 20th, 2021.

      (1)   Refer to Navitas Sustainability Report 2021 for details.

Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information:

Stephen Oliver, VP Corporate Marketing & Investor Relations,

A photo accompanying this announcement is available at



EN
04/08/2022

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Techno...

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its 5th-generation GeneSiC technology platform. The High Volt...

 PRESS RELEASE

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Eff...

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, Calif., Feb. 09, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and ...

 PRESS RELEASE

Navitas Semiconductor to Report Q4 and Full Year 2025 Financial Result...

Navitas Semiconductor to Report Q4 and Full Year 2025 Financial Results on Tuesday, February 24, 2026 TORRANCE, Calif., Jan. 28, 2026 (GLOBE NEWSWIRE) -- , (Nasdaq: NVTS) today announced that it will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and CFO, Todd Glickman, will host a conference call at 2:00 p.m. Pacific Time to discuss the Company’s financial results and business outlook. Analysts and investors are invited to join the conference call using the following informa...

 PRESS RELEASE

Navitas to Present at the Needham Growth Conference on January 14, 202...

Navitas to Present at the Needham Growth Conference on January 14, 2026 TORRANCE, Calif., Jan. 07, 2026 (GLOBE NEWSWIRE) -- , an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the 28th Annual Needham Growth Conference to be held at the Lotte New York Palace Hotel on Wednesday, January 14th. Navitas’ President and CEO, Chris Allexandre, is scheduled to host a fireside chat on Wednesday, January 14, 2026 at 2:15 p.m. EST and will be available to meet with attending i...

 PRESS RELEASE

Navitas Expands Global Distribution Network with Avnet

Navitas Expands Global Distribution Network with Avnet Navitas expands globally with Avnet building on its existing Avnet Silica (Europe) relationship, to support high-growth high-power markets such as AI data centers, performance computing, energy and grid infrastructure and industrial electrification TORRANCE, Calif., Dec. 11, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC), today announced an expansion of its distribution agreement with Avnet (Nasdaq: ), making Avnet a globally franchise...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch