NVTS NAVITAS SEMICONDUCTOR CORP

Navitas Presents Pure-Play, Next-Gen Power Semiconductors (GaN & SiC) in Non-Deal Roadshows

Navitas Presents Pure-Play, Next-Gen Power Semiconductors (GaN & SiC) in Non-Deal Roadshows

Expansion of technology, markets and geography positions Navitas for scale to replace legacy silicon chips in $22B/year market opportunity

TORRANCE, Calif., March 07, 2023 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, has announced participation in the following non-deal roadshows.



: March 7th, 8pm US eastern / 8th 9am CN/HK.

Speakers: Gene Sheridan, CEO and Ron Shelton, CFO

Registration: Contact Annie Liu, China Renaissance Corporate Access, .

: March 7th, 9pm eastern (in Mandarin) / 8th 10am CN/HK.

Speaker: Charles Zha, VP China, with Ron Shelton, CFO

Registration: Nicole Yang, CICC Research Department, .

: March 7th, 9:30pm / 8th 10:30am TW.

Speaker: Stephen Oliver, VP Corporate Marketing & Investor Relations

Registration: Alison Wang, Cathay Securities Institutional Sales, .

“We’re grateful to our friends at China Renaissance, CICC and Cathay Securities for the chance to update investors on GaNFast gallium nitride (GaN) power ICs and GeneSiC silicon carbide (SiC) power MOSFET and MPS diodes,” said Gene Sheridan, CEO and co-founder. “We continue to expand technology, markets and regions, and look forward to continued growth in 2023 as we accelerate the world’s transition away from fossil fuels and ‘Electrify Our World™’.”

About Navitas

(Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar / energy storage, home appliance / industrial, data center, mobile and consumer. Over 185 Navitas patents are issued or pending. Over 70 million GaN units have been shipped, now with the industry’s first and only . Navitas was the world’s first semiconductor company to be -certified.

Navitas Semiconductor, GaNFast, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information

Stephen Oliver, VP Corporate Marketing & Investor Relations

A photo accompanying this announcement is available at



EN
07/03/2023

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution fo...

Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers. TORRANCE, Calif. and LAUSANNE, Switzerland, March 04, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and École Polytechnique Fédérale de Lausanne (EPFL), Europe’s most...

 PRESS RELEASE

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and...

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026 Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs. TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- (Na...

 PRESS RELEASE

Navitas to Present at the Morgan Stanley Technology, Media & Telecom C...

Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 TORRANCE, Calif., Feb. 25, 2026 (GLOBE NEWSWIRE) -- , (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley Technology, Media and Telecom Conference to be held at the Palace Hotel in San Francisco, CA. Navitas’ President and CEO, Chris Allexandre, is scheduled to host a fireside chat at 12:20 p.m. Pacific Time on Tuesday, March 3, 2026, an...

 PRESS RELEASE

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Fina...

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion serviceable available market (SAM) in 2030High-power markets represented majority of quarterly revenue for the first time in the Company’s history with mobile declining to less than 25%Anticipates a return to top-line sequential growth beginning in t...

 PRESS RELEASE

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Techno...

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its 5th-generation GeneSiC technology platform. The High Volt...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch