NVTS NAVITAS SEMICONDUCTOR CORP

Navitas Semiconductor to Participate in Upcoming Investor Event

Navitas Semiconductor to Participate in Upcoming Investor Event

TORRANCE, Calif. , Nov. 17, 2025 (GLOBE NEWSWIRE) -- , an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, has announced participation in the following upcoming investor event:

UBS Global Technology and AI Conference

December 3, 2025, 1-on-1 meetings with Chris Allexandre, President and CEO, and Todd Glickman, CFO

Location: The Phoenician, Scottsdale, AZ

About Navitas

(Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. high-voltage SiC devices leverage patented to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be -certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact:

Lori Barker Investor Relations

A photo accompanying this announcement is available at



EN
17/11/2025

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and...

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026 Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs. TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- (Na...

 PRESS RELEASE

Navitas to Present at the Morgan Stanley Technology, Media & Telecom C...

Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 TORRANCE, Calif., Feb. 25, 2026 (GLOBE NEWSWIRE) -- , (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley Technology, Media and Telecom Conference to be held at the Palace Hotel in San Francisco, CA. Navitas’ President and CEO, Chris Allexandre, is scheduled to host a fireside chat at 12:20 p.m. Pacific Time on Tuesday, March 3, 2026, an...

 PRESS RELEASE

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Fina...

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion serviceable available market (SAM) in 2030High-power markets represented majority of quarterly revenue for the first time in the Company’s history with mobile declining to less than 25%Anticipates a return to top-line sequential growth beginning in t...

 PRESS RELEASE

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Techno...

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its 5th-generation GeneSiC technology platform. The High Volt...

 PRESS RELEASE

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Eff...

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, Calif., Feb. 09, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and ...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch