NVTS NAVITAS SEMICONDUCTOR CORP

Navitas, the Pure-play, Next-Gen Power Semiconductor Leader Announces New York Investor Meeting

Navitas, the Pure-play, Next-Gen Power Semiconductor Leader Announces New York Investor Meeting

In-person meeting to review recent accretive GeneSiC Semi acquisition, with detailed device, system and market review, plus hands-on demonstrations of GaN and SiC power technology

EL SEGUNDO, Calif., Aug. 31, 2022 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors, has announced an in-person investor meeting, at Nasdaq New York, on September 13th.

Navitas co-founder and CEO, Gene Sheridan, and CFO Ron Shelton will detail how gallium nitride (GaN) and silicon carbide (SiC) power semiconductors replace legacy silicon chips to address a $22B/year market by 2026 and enable a 6 Gton/year reduction in CO2e emissions by 2050.

The recent, accretive Semiconductor will be reviewed in detail, with a focus on complementary technology, company structure and Navitas’ unique, ‘pure-play’ next-gen, system-focused go-to-market strategy. Attendees will see examples of mobile, data center, motor drive, solar and EV applications highlighting performance benefits, including energy savings, charging speed, system size and cost.

This in-person event at NASDAQ’s 4 Times Square location in New York from 1pm to 4pm EDT, with a formal presentation followed by live Q&A and live hardware demonstrations including ultra-fast mobile charging, data center, EV and motor drive applications. For those unable to attend in-person, the presentation and Q&A will be available via livestream. Attendees should  (password = pureplay) and indicate preference for in-person or live-stream.

About Navitas

(Nasdaq: NVTS), founded in 2014, is the only pure-play, next-generation power-semiconductor company. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 185 Navitas patents are issued or pending. Over 50 million GaN units have been shipped to customers including Samsung, Dell, Lenovo and Xiaomi, with zero reported GaN field failures. Navitas introduced the industry’s first and only 20-year warranty. Navitas is the world’s first semiconductor company to be -certified.

Navitas Semiconductor, GaNFast, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information

Stephen Oliver, VP Corporate Marketing & Investor Relations

  

A photo accompanying this announcement is available at



EN
31/08/2022

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on NAVITAS SEMICONDUCTOR CORP

 PRESS RELEASE

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and...

Navitas to Exhibit Breakthrough Solutions for AI Data Center, Grid and Energy Infrastructure, Performance Computing, and Industrial Electrification at APEC 2026 Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices.Three Industry sessions covering reliability in SiC, GaN ICs for 800 VDC AI data center, and single-stage power converter enabled by bi-directional GaN ICs. TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- (Na...

 PRESS RELEASE

Navitas to Present at the Morgan Stanley Technology, Media & Telecom C...

Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 TORRANCE, Calif., Feb. 25, 2026 (GLOBE NEWSWIRE) -- , (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley Technology, Media and Telecom Conference to be held at the Palace Hotel in San Francisco, CA. Navitas’ President and CEO, Chris Allexandre, is scheduled to host a fireside chat at 12:20 p.m. Pacific Time on Tuesday, March 3, 2026, an...

 PRESS RELEASE

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Fina...

Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion serviceable available market (SAM) in 2030High-power markets represented majority of quarterly revenue for the first time in the Company’s history with mobile declining to less than 25%Anticipates a return to top-line sequential growth beginning in t...

 PRESS RELEASE

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Techno...

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure and, industrial electrification TORRANCE, Calif., Feb. 12, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of its 5th-generation GeneSiC technology platform. The High Volt...

 PRESS RELEASE

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Eff...

Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, Calif., Feb. 09, 2026 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and ...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch