6963 Rohm Co. Ltd.

ROHM and BASiC Semiconductor Form a Strategic Partnership

ROHM and BASiC Semiconductor Form a Strategic Partnership

Contributing to the technical innovation of new energy vehicles through the development of automotive SiC power devices

Santa Clara, CA and Kyoto, Japan, Dec. 01, 2022 (GLOBE NEWSWIRE) -- and Shenzhen BASiC Semiconductor today announced they have entered into a strategic partnership agreement on SiC power devices for automotive applications. A signing ceremony was held at ROHM’s headquarters in Kyoto to commemorate the occasion. Under this agreement, the two companies will leverage their respective strengths to innovate and improve the performance of SiC power devices and develop higher performing, more efficient and reliable SiC solutions for new energy vehicles.

The first step involves supplying onboard power modules that leverage the combined technologies to several major automakers for use in electric vehicle powertrains. Going forward, both ROHM and BASiC Semiconductor will contribute to technological innovation in the automotive sector by accelerating the development of innovative power solutions centered on SiC.

Weiwei He, General Manager of Shenzhen BASiC Semiconductor Ltd.

"Amid the undergoing technological revolution of new energy vehicles, the emergence of SiC power devices stands out as the key to improving electric drive efficiency. BASiC Semiconductor's early involvement in the automotive SiC power module business has led to breakthroughs in both product and market development. We are honored to work with ROHM, an internationally renowned semiconductor manufacturer, to develop high performance, high reliability automotive SiC power devices that meet customer needs and contribute to innovation in electric vehicle technology while reducing CO2 emissions.”

Isao Matsumoto, President and CEO of ROHM Co., Ltd.

“We are extremely pleased to enter into a strategic partnership with BASiC Semiconductor to provide competitive SiC solutions for the new energy vehicle market. ROHM has long been working towards achieving a decarbonized society through advanced electronics technologies. As the role of semiconductors in the automotive market continues to grow, ROHM will strive to manufacture high quality products that can lead to the creation of a safe, secure, environmentally friendly society.”

About Shenzhen BASiC Semiconductor Ltd.

Shenzhen BASiC Semiconductor Ltd., a leading company in China’s next-generation power semiconductor industry, is engaged in R&D in a variety of fields, from SiC power device materials manufacturing, chip design and production expertise to packaging, testing, and drive applications using advanced SiC core technologies. Currently headquartered in Shenzhen, the company has established a domestic and overseas dual-circulation supply chain system comprised of a multi-region integrated layout that includes Beijing, Shanghai, Nanjing, Wuxi, and Nagoya.

BASiC Semiconductor has shipped more than 20 million SiC power devices to over 600 customers around the globe in a wide variety of applications, including electric vehicles, solar power generation, energy storage systems, telecom power supplies, servers, charging stations, and consumer electronics. Please visit BASiC Semiconductor’s website for more information:

About ROHM Co., Ltd.

ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958 (Showa 33). From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. The company’s strengths in the analog and power markets allow ROHM to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance. Please visit ROHM’s website for more information:

Attachment



Travis Moench
ROHM Semiconductor
858.625.3600
 

Heather Savage
BWW Communications
720.295.0260
 
EN
01/12/2022

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on Rohm Co. Ltd.

 PRESS RELEASE

ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ...

ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- today announced the development of the , a 30V N-channel MOSFET in a common-source configuration that delivers an industry-leading ON-resistance of just 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications requi...

 PRESS RELEASE

ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading...

ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading* SOA Performance and Ultra-Low ON-Resistance Endorsed by a major global cloud platform provider Santa Clara, CA and Kyoto, Japan, July 01, 2025 (GLOBE NEWSWIRE) -- today announced the launch of the , a 100V power MOSFET optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies that require robust battery protection. As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In...

 PRESS RELEASE

ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage Ga...

ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- today announced the development of the  , an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. As global energy consumption continues to grow, energy-saving initi...

 PRESS RELEASE

ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V ...

ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture Santa Clara, CA, June 12, 2025 (GLOBE NEWSWIRE) -- As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and...

 PRESS RELEASE

New High Accuracy Current Sense Amps Compatible with Both Negative and...

New High Accuracy Current Sense Amps Compatible with Both Negative and High Voltages Santa Clara, CA and Kyoto Japan, June 11, 2025 (GLOBE NEWSWIRE) -- today announced they have developed a new lineup of high accuracy current sense amps – the and the . Both series are qualified under the AEC-Q100 automotive reliability standard. The BD1423xFVJ-C series, offered in the TSSOP-B8J package, supports input voltages up to +80V, making it ideal for high-voltage environments such as 48V DC-DC converters, redundant power supplies, auxiliary batteries, and electric compressors. The lineup include...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch