6963 Rohm Co. Ltd.

ROHM Completes Acquisition of New Production Site

ROHM Completes Acquisition of New Production Site

Expanding production capacity for SiC power devices

Santa Clara, CA and Kyoto, Japan, Nov. 07, 2023 (GLOBE NEWSWIRE) -- today announced they have completed acquisition of the assets of Solar Frontier’s former Kunitomi Plant located in Japan, based on its basic agreement signed with Solar Frontier. The Plant will be operated by LAPIS Semiconductor, a subsidiary of the ROHM Group, as its Miyazaki Plant No. 2. It will become the Group's main production site for SiC power devices and is aiming to start operation during 2024.

The ROHM Group will continue to strengthen its production capacity in accordance with its Medium-Term Management Plan while keeping abreast of market conditions and will thoroughly enhance its BCM system to ensure a stable supply of products to customers.

Outline of Miyazaki Plant No. 2

  • Location: 1815 Taziri, Kunitomi-cho, Higashimorokata-gun, Miyazaki, Japan
  • Site area: Approximately 400,000 m2
  • Total floor area: Approximately 230,000 m2
  • Acquisition price: Not disclosed
  • Acquisition date: November 7, 2023

Notes:

1. Solar Frontier plans to continue to use part of the site and buildings as its business office (lease).

2. ROHM’s announcement of July 12, 2023: .

Attachment



Travis Moench
ROHM Semiconductor
858.625.3600
 

Heather Savage
BWW Communications
720.295.0260
 
EN
07/11/2023

Underlying

To request access to management, click here to engage with our
partner Phoenix-IR's CorporateAccessNetwork.com

Reports on Rohm Co. Ltd.

 PRESS RELEASE

ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ...

ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- today announced the development of the , a 30V N-channel MOSFET in a common-source configuration that delivers an industry-leading ON-resistance of just 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications requi...

 PRESS RELEASE

ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading...

ROHM Introduces a New MOSFET for AI Servers Featuring Industry-Leading* SOA Performance and Ultra-Low ON-Resistance Endorsed by a major global cloud platform provider Santa Clara, CA and Kyoto, Japan, July 01, 2025 (GLOBE NEWSWIRE) -- today announced the launch of the , a 100V power MOSFET optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies that require robust battery protection. As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In...

 PRESS RELEASE

ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage Ga...

ROHM Launches an Isolated Gate Driver IC Optimized for High-Voltage GaN Devices Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- today announced the development of the  , an isolated gate driver IC optimized for driving 600V-class high-voltage GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. As global energy consumption continues to grow, energy-saving initi...

 PRESS RELEASE

ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V ...

ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture Santa Clara, CA, June 12, 2025 (GLOBE NEWSWIRE) -- As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and...

 PRESS RELEASE

New High Accuracy Current Sense Amps Compatible with Both Negative and...

New High Accuracy Current Sense Amps Compatible with Both Negative and High Voltages Santa Clara, CA and Kyoto Japan, June 11, 2025 (GLOBE NEWSWIRE) -- today announced they have developed a new lineup of high accuracy current sense amps – the and the . Both series are qualified under the AEC-Q100 automotive reliability standard. The BD1423xFVJ-C series, offered in the TSSOP-B8J package, supports input voltages up to +80V, making it ideal for high-voltage environments such as 48V DC-DC converters, redundant power supplies, auxiliary batteries, and electric compressors. The lineup include...

ResearchPool Subscriptions

Get the most out of your insights

Get in touch